Lattice-mismatched epitaxy for fabricating HgCdTe infrared materials and detectors /

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"Version: 20251201"--Title page verso.Includes bibliographical references.1. Introduction to HgCdTe infrared materials and detectors -- 1.1. Infrared electromagnetic bands and their applications -- 1.2. Infrared detectors and performance choice -- 1.3. HgCdTe infrared detectors -- 1.4. Current status and challenges of HgCdTe infrared detectors -- 1.5. How to achieve lower cost and larger array format size for HgCdTe detectors2. General growth mechanism of heteroepitaxy -- 2.1. Introduction to semiconductor heterostructures and heteroepitaxy -- 2.2. Growth mechanism of lattice-matched heteroepitaxy -- 2.3. Growth mechanisms of lattice-mismatched heteroepitaxy -- 2.4. Van der Waals heteroepitaxy -- 2.5. Summary3. Heteroepitaxial growth of HgCdTe on lattice-mismatched substrates -- 3.1. Introduction to heteroepitaxial growth of HgCdTe on lattice-mismatched substrates -- 3.2. Heteroepitaxial growth of CdTe and HgCdTe on Si substrates -- 3.3. Heteroepitaxial growth of CdTe and HgCdTe on Ge substrates -- 3.4. Heteroepitaxial growth of CdTe and HgCdTe on GaAs substrates -- 3.5. Heteroepitaxial growth of CdTe and HgCdTe on GaSb substrates -- 3.6. Other alternative substrates -- 3.7. Summary4. Heteroepitaxial growth of HgCdTe on lattice-mismatched two-dimensional substrates -- 4.1. Introduction to Van der Waals epitaxy of CdTe and HgCdTe materials on two-dimensional substrates -- 4.2. Heteroepitaxial growth of CdTe and HgCdTe on graphene substrates -- 4.3. Heteroepitaxial growth of CdTe and HgCdTe on mica substrates -- 4.4. Heteroepitaxial growth of CdTe and HgCdTe on other two-dimensional substrates -- 4.5. Summary5. HgCdTe infrared detectors based on lattice-mismatched epitaxial growth -- 5.1. Short-wave infrared HgCdTe detectors on lattice-mismatched substrates -- 5.2. Mid-wave infrared HgCdTe detectors on lattice-mismatched substrates -- 5.3. Long-wave infrared HgCdTe detectors on lattice-mismatched substrates -- 5.4. Summary6. Heteroepitaxy of HgCdSe on GaSb--an alternative pathway towards infrared detectors with features of lower cost and larger array format -- 6.1. HgCdSe--an emerging infrared material to replace HgCdTe -- 6.2. MBE heteroepitaxial growth of HgCdSe on GaSb substrates -- 6.3. Material properties of HgCdSe grown on GaSb substrates -- 6.4. Demonstration of mid-wave infrared HgCdSe detectors -- 6.5. Summary7. Outlook for next-generation HgCdTe infrared detectors with features of lower cost and larger array format -- 7.1. Summary of previous chapters -- 7.2. Outlook/perspective for next generation HgCdTe infrared detectors with features of lower cost and larger array format.Full-text restricted to subscribers or individual document purchasers.Applying HgCdTe infrared material as a key example, this book delves into the theoretical knowledge and experimental techniques necessary to achieve high quality semiconductor lattice-mismatched heteroepitaxy for applications in high performance electronic and optoelectronic devices. The concepts and techniques introduced in this book can be extended to other semiconductor material systems and devices, and thus, it serves as an essential reference book for engineers, researchers and academics working in the general area of semiconductor epitaxy and related device applications. By guiding the development of superior heteroepitaxial materials, it supports the creation of next-generation electronic and optoelectronic devices with expanded performance and functionality. Part of IOP Series in Sensors and Sensor Systems.Industrial and academic researchers involved in IR sensor development.Also available in print.Mode of access: World Wide Web.System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.Dr. Wen Lei is a professor, an ARC Future Fellow, the Program Chair of Electrical and Electronic Engineering, and the Chair of the IEEE Western Australia Joint ESP Chapter (Electron Devices Society, Solid State Circuits Society, and Photonics Society), and leads the Electronic Materials and Devices Research at Department of Electrical, Electronic and Computer Engineering, University of Western Australia. His current research mainly focuses on semiconductor materials, devices and their system applications, especially infrared detectors. He, together with his colleagues, has demonstrated the first Australian-made prototype mid-wave HgCdTe infrared focal plane arrays with commercial format size. He holds a number of patents and has published 4 book chapters and more than 160 high profile papers in top journals including Physical Review Letters, Applied Physics Reviews, Advanced Materials, Advanced Functional Materials, etc. He was awarded his prestigious ARC Future Fellowship in 2013 and ARC Australian Postdoctoral Fellowship in 2006. He also received several "Best Paper" Awards from IEEE journals and IEEE conferences, and is regularly invited to deliver plenary/keynote presentations at premium international conferences. He is also an associate editor/editorial board member of five international journals, a member of Scientific Advisory Board/Technical Program Committee/Organizing Committee for several international conferences and a regular reviewer for various international prestigious journals and funding agencies in Australia, Singapore, Netherlands, Israel, Romania and Hong Kong.Title from PDF title page (viewed on January 8, 2026).

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Publisher

: .,

Collation

1 online resource (various pagings) :illustrations (some color).

Language

English

ISBN/ISSN

9780750334433

Classification

537.6/226

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-

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-

Edition

-

Subject(s)

Instruments & instrumentation engineering.
TECHNOLOGY & ENGINEERING / Sensors.
Infrared detectors.
Compound semiconductors.
Epitaxy.

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Wen Lei.

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