Lithium niobate-based heterostructures :synthesis, properties, and electron phenomena /
"Version: 20241001"--Title page verso.Includes bibliographical references.1. Lithium niobate thin films : potential applications, synthesis methods, structure, and properties -- 1.1. The structure and main properties of bulk lithium niobate -- 1.2. Applications of thin LiNbO3 films -- 1.3. Fabrication methods of thin LiNbO3 films -- 1.4. Fundamentals and critical parameters of the RFMS method and the ion-beam sputtering method -- 1.5. Electrical properties and charge transport phenomena in LiNbO3-based heterostructures -- 1.6. Major application-focused challenges in the synthesis of thin LiNbO3 films -- 1.7. Summary and discussion2. Synthesis, structure, and surface morphology of LiNbO3 films -- 2.1. Technological regimes for the synthesis of thin LiNbO3 films by radiofrequency magnetron sputtering and ion-beam sputtering methods -- 2.2. Direct growth of polycrystalline LiNbO3 films -- 2.3. Influence of the synthesis regime and subsequent annealing on the composition and structural properties of LiNbO3 films -- 2.4. Summary and discussion3. Electron phenomena in LiNbO3-based heterostructures -- 3.1. Basic electrical properties of LiNbO3 thin films in Si-LiNbO3 heterostructures -- 3.2. Conduction mechanisms in (001)Si-LiNbO3 heterostructures -- 3.3. Band diagram of the Si-LiNbO3 heterostructures -- 3.4. Impedance spectroscopy and AC conductivity of thin LiNbO3 films -- 3.5. Summary and discussion4. Effect of sputtering conditions and post-growth treatment on electron phenomena in Si-LiNbO3 heterostructures -- 4.1. Effects of spatial plasma inhomogeneity and composition and the relative target-substrate position -- 4.2. Thermal annealing effect on electrical properties of Si-LiNbO3 heterostructures -- 4.3. Impedance spectroscopy of Si-LiNbO3-Al heterostructures after thermal annealing -- 4.4. Optical bandgap of thin LiNbO3 films produced by different fabrication regimes -- 4.5. Temperature-induced transition from p-type to n-type conduction in LiNbO3/Nb2O5 polycrystalline films -- 4.6. Summary and discussion5. Oxide charge : localization, evolution, and related phenomena at heterojunctions -- 5.1. Electrical properties and crystallization of amorphous Li-Nb-O films on silicon -- 5.2. Evolution of oxide charge during the crystallization of amorphous Li-Nb-O films -- 5.3. Transport properties and crystallization of Li-Nb-O films -- 5.4. Charge phenomena at Si-LiNbO3 heterojunctions -- 5.5. Charge phenomena in NiSi2-LiNbO3 heterostructures -- 5.6. Summary and discussion -- 6. Bonus chapter : multifunctional Si-LiNbO3 heterostructures for nonvolatile memory units.Full-text restricted to subscribers or individual document purchasers.This book explores the fundamental principles of fabricating LiNbO3-based heterostructures, examining their properties and the electron phenomena that underpin their effective use in various devices. The monograph presents a wealth of original experimental results, drawn from fifteen years of extensive research on Lithium Niobate thin films, their core properties, and applications. It serves as a valuable resource for readers across various fields of Materials Science, offering both foundational knowledge and practical insights. The first edition has garnered highly positive feedback from leading experts worldwide.Researchers and industry specialists working in Materials Science, Optoelectronics, and Integrated electronics.Also available in print.Mode of access: World Wide Web.System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.Maxim Sumets is a Physics Professor at Grayson College, USA, with over 25 years of experience in teaching and research. He holds a Master's and Ph.D. from Voronezh State University, Russia, and specializes in Materials Science, focusing on thin films, semiconductor heterostructures, and ferroelectrics. Dr. Sumets is an expert in the electrical and structural properties of materials and serves as a reviewer for several prestigious scientific journals, including Ceramics International, Materials Science in Semiconductor Processing, and Surfaces and Interfaces.Title from PDF title page (viewed on November 4, 2024).
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